Study of Incubation Layers in Microcrystalline Silicon Solar Cells

Zhang Xiaodan; Zhao Ying; Gao Yantao; Zhu Feng; Wei Changchun; 孙建; Sun Jian; Geng Xinhua

Key Laboratory of the Ministry of Education of Opto-Electronic Information Science and Technology(Nankai University,Tianjin University),Key Laboratory of Photo-Electronics Thin Film Devices and Technique of Tianjin,Institute of Photo-Electronics Thin Film Devices and Technique,Nankai University,Tianjin 300071,China
Key Laboratory of the Ministry of Education of Opto-Electronic Information Science and Technology(Nankai University,Tianjin University),Key Laboratory of Photo-Electronics Thin Film Devices and Technique of Tianjin,Institute of Photo-Electronics Thin Film Devices and Technique,Nankai University,Tianjin 300071,China
Key Laboratory of the Ministry of Education of Opto-Electronic Information Science and Technology(Nankai University,Tianjin University),Key Laboratory of Photo-Electronics Thin Film Devices and Technique of Tianjin,Institute of Photo-Electronics Thin Film Devices and Technique,Nankai University,Tianjin 300071,China
Key Laboratory of the Ministry of Education of Opto-Electronic Information Science and Technology(Nankai University,Tianjin University),Key Laboratory of Photo-Electronics Thin Film Devices and Technique of Tianjin,Institute of Photo-Electronics Thin Film Devices and Technique,Nankai University,Tianjin 300071,China
Key Laboratory of the Ministry of Education of Opto-Electronic Information Science and Technology(Nankai University,Tianjin University),Key Laboratory of Photo-Electronics Thin Film Devices and Technique of Tianjin,Institute of Photo-Electronics Thin Film Devices and Technique,Nankai University,Tianjin 300071,China
Key Laboratory of the Ministry of Education of Opto-Electronic Information Science and Technology(Nankai University,Tianjin University),Key Laboratory of Photo-Electronics Thin Film Devices and Technique of Tianjin,Institute of Photo-Electronics Thin Film Devices and Technique,Nankai University,Tianjin 300071,China
Key Laboratory of the Ministry of Education of Opto-Electronic Information Science and Technology(Nankai University,Tianjin University),Key Laboratory of Photo-Electronics Thin Film Devices and Technique of Tianjin,Institute of Photo-Electronics Thin Film Devices and Technique,Nankai University,Tianjin 300071,China
Key Laboratory of the Ministry of Education of Opto-Electronic Information Science and Technology(Nankai University,Tianjin University),Key Laboratory of Photo-Electronics Thin Film Devices and Technique of Tianjin,Institute of Photo-Electronics Thin Film Devices and Technique,Nankai University,Tianjin 300071,China

Article Navigation > Journal of Semiconductors > 2006 > 27(6): 1030-1033

袁红辉, 袁剑辉, 王京辉. 一种红外探测器专用77K工作CMOS前置放大器[J]. 半导体学报(英文版), 2005, 26(4): 790-794.

Citation:

Zhang Xiaodan, Zhao Ying, Gao Yantao, Zhu Feng, Wei Changchun, 孙建, Sun Jian, Geng Xinhua. Study of Incubation Layers in Microcrystalline Silicon Solar Cells[J]. Journal of Semiconductors, 2006, 27(6): 1030-1033. ****

Zhang X D, Zhao Y, Gao Y T, Zhu F, Wei C C, Sun J, Geng X H. Study of Incubation Layers in Microcrystalline Silicon Solar Cells[J]. Chin. J. Semicond., 2006, 27(6): 1030.

袁红辉, 袁剑辉, 王京辉. 一种红外探测器专用77K工作CMOS前置放大器[J]. 半导体学报(英文版), 2005, 26(4): 790-794.

Citation:

Zhang X D, Zhao Y, Gao Y T, Zhu F, Wei C C, Sun J, Geng X H. Study of Incubation Layers in Microcrystalline Silicon Solar Cells[J]. Chin. J. Semicond., 2006, 27(6): 1030.

PDF( 144 KB)

Study of Incubation Layers in Microcrystalline Silicon Solar Cells

Key Laboratory of the Ministry of Education of Opto-Electronic Information Science and Technology(Nankai University,Tianjin University),Key Laboratory of Photo-Electronics Thin Film Devices and Technique of Tianjin,Institute of Photo-Electronics Thin Film Devices and Technique,Nankai University,Tianjin 300071,China
Key Laboratory of the Ministry of Education of Opto-Electronic Information Science and Technology(Nankai University,Tianjin University),Key Laboratory of Photo-Electronics Thin Film Devices and Technique of Tianjin,Institute of Photo-Electronics Thin Film Devices and Technique,Nankai University,Tianjin 300071,China
Key Laboratory of the Ministry of Education of Opto-Electronic Information Science and Technology(Nankai University,Tianjin University),Key Laboratory of Photo-Electronics Thin Film Devices and Technique of Tianjin,Institute of Photo-Electronics Thin Film Devices and Technique,Nankai University,Tianjin 300071,China
Key Laboratory of the Ministry of Education of Opto-Electronic Information Science and Technology(Nankai University,Tianjin University),Key Laboratory of Photo-Electronics Thin Film Devices and Technique of Tianjin,Institute of Photo-Electronics Thin Film Devices and Technique,Nankai University,Tianjin 300071,China
Key Laboratory of the Ministry of Education of Opto-Electronic Information Science and Technology(Nankai University,Tianjin University),Key Laboratory of Photo-Electronics Thin Film Devices and Technique of Tianjin,Institute of Photo-Electronics Thin Film Devices and Technique,Nankai University,Tianjin 300071,China
Key Laboratory of the Ministry of Education of Opto-Electronic Information Science and Technology(Nankai University,Tianjin University),Key Laboratory of Photo-Electronics Thin Film Devices and Technique of Tianjin,Institute of Photo-Electronics Thin Film Devices and Technique,Nankai University,Tianjin 300071,China
Key Laboratory of the Ministry of Education of Opto-Electronic Information Science and Technology(Nankai University,Tianjin University),Key Laboratory of Photo-Electronics Thin Film Devices and Technique of Tianjin,Institute of Photo-Electronics Thin Film Devices and Technique,Nankai University,Tianjin 300071,China
Key Laboratory of the Ministry of Education of Opto-Electronic Information Science and Technology(Nankai University,Tianjin University),Key Laboratory of Photo-Electronics Thin Film Devices and Technique of Tianjin,Institute of Photo-Electronics Thin Film Devices and Technique,Nankai University,Tianjin 300071,China

Received Date: 2015-08-20

Abstract

Abstract

The structure of microcrystalline silicon thin film solar cells prepared by very high frequency plasma enhanced chemical vapor deposition,is studied.Raman measurements indicate that there is an amorphous incubation layer at the p/i interface in the solar cells.The thickness of the incubation layer increases with increasing silane concentration and decreasing discharge power.A suitable silane concentration and discharge power can be used to reduce the thickness of the incubation layer.
- microcrystalline silicon thin film solar cells,
- incubation layer,
- Raman scattering spectra

FullText(HTML)

References(0)

References

Study of Incubation Layers in Microcrystalline Silicon Solar Cells

Search

GET CITATION

Share:

Article Metrics

History

Catalog

Email This Article

Study of Incubation Layers in Microcrystalline Silicon Solar Cells

Abstract

References

Proportional views

Catalog

Study of Incubation Layers in Microcrystalline Silicon Solar Cells

Search

GET CITATION

Share:

Article Metrics

History

Catalog

Email This Article

Study of Incubation Layers in Microcrystalline Silicon Solar Cells

Abstract

References

Proportional views

Catalog

Export File

Citation

Format

Content