Abstract: A single CMOS image sensor based on a 0.35μm process along with its design and implementation is introduced.The architecture of an active pixel sensor is used in the chip.The fill factor of a pixel cell can reach 43%,higher than the traditional factor of 30%.Moreover,compared with the conventional method whose fixed pattern noise (FPN) is around 0.5%, a dynamic digital double sampling technique is developed,which possesses simpler circuit architecture and a better FPN suppression outcome.The CMOS image sensor chip is implemented in the 0.35μm mixed signal process of a Chartered by MPW.The experimental results show that the chip operates well,with an FPN of about 0.17%.

Key words: active pixel,  CMOS image sensor,  fill factor,  dynamic digital double sampling,  fixed pattern noise