Chin. J. Semicond. > 2002, Volume 23 > Issue 2 > 157-160
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高阻碲锌镉单晶体的生长及其性能观测

李奇峰 , 朱世富 , 赵北君 , 蔡力 , 高德友 and 金应荣

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Key words: Cd0.8Zn0.2Te, 单晶生长, 布里奇曼法, 室温核辐射探测器

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    Received: 19 August 2015 Revised: Online: Published: 01 February 2002

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      Article Navigation >  Journal of Semiconductors  > 2002  >  23(2): 157-160
      李奇峰, 朱世富, 赵北君, 蔡力, 高德友, 金应荣. 高阻碲锌镉单晶体的生长及其性能观测[J]. 半导体学报(英文版), 2002, 23(2): 157-160.
      Citation:
      李奇峰, 朱世富, 赵北君, 蔡力, 高德友, 金应荣. 高阻碲锌镉单晶体的生长及其性能观测[J]. 半导体学报(英文版), 2002, 23(2): 157-160.
      shu

      • Received Date: 2015-08-19

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