Chin. J. Semicond. > 1996, Volume 17 > Issue 8 > 561-567

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温度对势垒区δ掺杂量子阱Si／Ge_（0．3）Si_（0．7）的电子能带结构的影响

徐至中

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    Received: 18 August 2015 Revised: Online: Published: 01 August 1996

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      Article Navigation >  Journal of Semiconductors  > 1996  >  17(8): 561-567
      徐至中. 温度对势垒区δ掺杂量子阱Si／Ge_（0．3）Si_（0．7）的电子能带结构的影响[J]. 半导体学报(英文版), 1996, 17(8): 561-567.
      Citation:
      徐至中. 温度对势垒区δ掺杂量子阱Si／Ge_（0．3）Si_（0．7）的电子能带结构的影响[J]. 半导体学报(英文版), 1996, 17(8): 561-567.
      shu

      • Received Date: 2015-08-18

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