Chin. J. Semicond. > 1998, Volume 19 > Issue 4 > 267-274
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半绝缘GaAs单晶化学配比的X射线双晶衍射Bond方法测量

王玉田 , 陈诺夫 , 何宏家 and 林兰英

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    Received: 20 August 2015 Revised: Online: Published: 01 April 1998

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      Article Navigation >  Journal of Semiconductors  > 1998  >  19(4): 267-274
      王玉田, 陈诺夫, 何宏家, 林兰英. 半绝缘GaAs单晶化学配比的X射线双晶衍射Bond方法测量[J]. 半导体学报(英文版), 1998, 19(4): 267-274.
      Citation:
      王玉田, 陈诺夫, 何宏家, 林兰英. 半绝缘GaAs单晶化学配比的X射线双晶衍射Bond方法测量[J]. 半导体学报(英文版), 1998, 19(4): 267-274.
      shu

      • Received Date: 2015-08-20

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