Chin. J. Semicond. > 1998, Volume 19 > Issue 4 > 261-266
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不同偏置电压下SiGe HBT Early电压的理论研究

钱伟 , 金晓军 , 张炯 , 林惠旺 , 陈培毅 and 钱佩信

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    Received: 20 August 2015 Revised: Online: Published: 01 April 1998

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      Article Navigation >  Journal of Semiconductors  > 1998  >  19(4): 261-266
      钱伟, 金晓军, 张炯, 林惠旺, 陈培毅, 钱佩信. 不同偏置电压下SiGe HBT Early电压的理论研究[J]. 半导体学报(英文版), 1998, 19(4): 261-266.
      Citation:
      钱伟, 金晓军, 张炯, 林惠旺, 陈培毅, 钱佩信. 不同偏置电压下SiGe HBT Early电压的理论研究[J]. 半导体学报(英文版), 1998, 19(4): 261-266.
      shu

      • Received Date: 2015-08-20

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