Abstract: The temperature distribution of typical-sized n-type polycrystalline silicon thin film transistors under self-heating (SH) stress is studied by finite element analysis. From both steady-state and transient thermal simulation, the influence of device power density,substrate material,and channel width on temperature distribution is analyzed.This study is useful for understanding the mechanism of self-heating degradation,and to find approaches to effectively alleviate the SH effect in device operation.

Key words: FEA, temperature distribution, thin film transistor, self-heating degradation, steady-state and transient simulation