Chin. J. Semicond. > 1986, Volume 7 > Issue 5 > 480-488
|

CONTENTS

硅中过饱和砷在后退火过程中的析出及其对硅原子移位影响的实验研究

卢志恒 , 张孝吉 and W.K.Chu

+ Author Affiliations

PDF

    • Search

    Advanced Search >>

    GET CITATION

    shu

    Export: BibTex EndNote

    Article Metrics

    Article views: 2793 Times PDF downloads: 684 Times Cited by: 0 Times

    History

    Received: 20 August 2015 Revised: Online: Published: 01 May 1986

    Catalog

      Email This Article

      User name:
      Email:*请输入正确邮箱
      Code:*验证码错误
      Send
      Article Navigation >  Journal of Semiconductors  > 1986  >  7(5): 480-488
      卢志恒, 张孝吉, W.K.Chu. 硅中过饱和砷在后退火过程中的析出及其对硅原子移位影响的实验研究[J]. 半导体学报(英文版), 1986, 7(5): 480-488.
      Citation:
      卢志恒, 张孝吉, W.K.Chu. 硅中过饱和砷在后退火过程中的析出及其对硅原子移位影响的实验研究[J]. 半导体学报(英文版), 1986, 7(5): 480-488.
      shu

      • Received Date: 2015-08-20

      Catalog

        Journal of Semiconductors © 2017 All Rights Reserved   京ICP备05085259号-2

        /

        DownLoad:  Full-Size Img  PowerPoint
        Return
        Return