Chin. J. Semicond. > 1996, Volume 17 > Issue 4 > 245-251
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结区中存在量子阱结构样品的C－V特性分析

陆昉，王勤华，王建宝，蒋家禹，孙恒慧

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    Received: 18 August 2015 Revised: Online: Published: 01 April 1996

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      Article Navigation >  Journal of Semiconductors  > 1996  >  17(4): 245-251
      陆昉，王勤华，王建宝，蒋家禹，孙恒慧. 结区中存在量子阱结构样品的C－V特性分析[J]. 半导体学报(英文版), 1996, 17(4): 245-251.
      Citation:
      陆昉，王勤华，王建宝，蒋家禹，孙恒慧. 结区中存在量子阱结构样品的C－V特性分析[J]. 半导体学报(英文版), 1996, 17(4): 245-251.
      shu

      • Received Date: 2015-08-18

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