Chin. J. Semicond. > 1989, Volume 10 > Issue 7 > 503-508
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空心阴极离子淀积TiN薄膜特性研究

高玉芝 , 夏宗璜 , 武国英 , 张利春 , 黄济群 and 张德贤

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    Received: 19 August 2015 Revised: Online: Published: 01 July 1989

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      Article Navigation >  Journal of Semiconductors  > 1989  >  10(7): 503-508
      高玉芝, 夏宗璜, 武国英, 张利春, 黄济群, 张德贤. 空心阴极离子淀积TiN薄膜特性研究[J]. 半导体学报(英文版), 1989, 10(7): 503-508.
      Citation:
      高玉芝, 夏宗璜, 武国英, 张利春, 黄济群, 张德贤. 空心阴极离子淀积TiN薄膜特性研究[J]. 半导体学报(英文版), 1989, 10(7): 503-508.
      shu

      • Received Date: 2015-08-19

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