Journal of Semiconductors

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Volume 10, Issue 7, Jul 1989

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CONTENTS

RF溅射碳化硅薄膜的结构研究

王英华, 汤海鹏, 田民波, 李恒德

Chin. J. Semicond. 1989, 10(7): 483-488

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null. null[J]. Chin. Journal of Semiconductors, 1989, 10(7): 483.

王英华, 汤海鹏, 田民波, 李恒德. RF溅射碳化硅薄膜的结构研究[J]. Chin. J. Semicond., 1989, 10(7): 483..Export: BibTex EndNote

王英华, 汤海鹏, 田民波, 李恒德. RF溅射碳化硅薄膜的结构研究[J]. Chin. J. Semicond., 1989, 10(7): 483...

NMOS短沟DD结构热载流子效应的研究

杨肇敏, 徐葭生

Chin. J. Semicond. 1989, 10(7): 489-496

Abstract PDF Cited by ()

null. null[J]. Chin. Journal of Semiconductors, 1989, 10(7): 489.

杨肇敏, 徐葭生. NMOS短沟DD结构热载流子效应的研究[J]. Chin. J. Semicond., 1989, 10(7): 489..Export: BibTex EndNote

杨肇敏, 徐葭生. NMOS短沟DD结构热载流子效应的研究[J]. Chin. J. Semicond., 1989, 10(7): 489...

射频溅射CoMnNi氧化物薄膜结构研究

谭辉, 陶明德, 韩英, 张寒

Chin. J. Semicond. 1989, 10(7): 497-502

Abstract PDF Cited by ()

null. null[J]. Chin. Journal of Semiconductors, 1989, 10(7): 497.

谭辉, 陶明德, 韩英, 张寒. 射频溅射CoMnNi氧化物薄膜结构研究[J]. Chin. J. Semicond., 1989, 10(7): 497..Export: BibTex EndNote

谭辉, 陶明德, 韩英, 张寒. 射频溅射CoMnNi氧化物薄膜结构研究[J]. Chin. J. Semicond., 1989, 10(7): 497...

空心阴极离子淀积TiN薄膜特性研究

高玉芝, 夏宗璜, 武国英, 张利春, 黄济群, 张德贤

Chin. J. Semicond. 1989, 10(7): 503-508

Abstract PDF Cited by ()

null. null[J]. Chin. Journal of Semiconductors, 1989, 10(7): 503.

高玉芝, 夏宗璜, 武国英, 张利春, 黄济群, 张德贤. 空心阴极离子淀积TiN薄膜特性研究[J]. Chin. J. Semicond., 1989, 10(7): 503..Export: BibTex EndNote

高玉芝, 夏宗璜, 武国英, 张利春, 黄济群, 张德贤. 空心阴极离子淀积TiN薄膜特性研究[J]. Chin. J. Semicond., 1989, 10(7): 503...

PMMA的离子束曝光特性

王宇钢, 赵渭江, 郑桂洲, 高玉芝

Chin. J. Semicond. 1989, 10(7): 509-513

Abstract PDF Cited by ()

null. null[J]. Chin. Journal of Semiconductors, 1989, 10(7): 509.

王宇钢, 赵渭江, 郑桂洲, 高玉芝. PMMA的离子束曝光特性[J]. Chin. J. Semicond., 1989, 10(7): 509..Export: BibTex EndNote

王宇钢, 赵渭江, 郑桂洲, 高玉芝. PMMA的离子束曝光特性[J]. Chin. J. Semicond., 1989, 10(7): 509...

注入氧形成的SOI结构中氧分布的模拟

阮刚, 徐晨曦, 俞强

Chin. J. Semicond. 1989, 10(7): 514-518

Abstract PDF Cited by ()

null. null[J]. Chin. Journal of Semiconductors, 1989, 10(7): 514.

阮刚, 徐晨曦, 俞强. 注入氧形成的SOI结构中氧分布的模拟[J]. Chin. J. Semicond., 1989, 10(7): 514..Export: BibTex EndNote

阮刚, 徐晨曦, 俞强. 注入氧形成的SOI结构中氧分布的模拟[J]. Chin. J. Semicond., 1989, 10(7): 514...

离子束增强沉积制备氮化硅薄膜的计算机模拟

周建坤, 陈酉善, 柳襄怀, 杨根庆, 邹世昌

Chin. J. Semicond. 1989, 10(7): 519-524

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null. null[J]. Chin. Journal of Semiconductors, 1989, 10(7): 519.

周建坤, 陈酉善, 柳襄怀, 杨根庆, 邹世昌. 离子束增强沉积制备氮化硅薄膜的计算机模拟[J]. Chin. J. Semicond., 1989, 10(7): 519..Export: BibTex EndNote

周建坤, 陈酉善, 柳襄怀, 杨根庆, 邹世昌. 离子束增强沉积制备氮化硅薄膜的计算机模拟[J]. Chin. J. Semicond., 1989, 10(7): 519...

一种制作亚微米间隔的方法

谢可勋, 蒋建飞, 谢缨

Chin. J. Semicond. 1989, 10(7): 525-528

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null. null[J]. Chin. Journal of Semiconductors, 1989, 10(7): 525.

谢可勋, 蒋建飞, 谢缨. 一种制作亚微米间隔的方法[J]. Chin. J. Semicond., 1989, 10(7): 525..Export: BibTex EndNote

谢可勋, 蒋建飞, 谢缨. 一种制作亚微米间隔的方法[J]. Chin. J. Semicond., 1989, 10(7): 525...

窄禁带半磁半导体Hg_(1-x)Mn_xTe的磁化强度

陈辰嘉, 王学忠, 刘继周, R.R.Galazka

Chin. J. Semicond. 1989, 10(7): 529-533

Abstract PDF Cited by ()

null. null[J]. Chin. Journal of Semiconductors, 1989, 10(7): 529.

陈辰嘉, 王学忠, 刘继周, R.R.Galazka. 窄禁带半磁半导体Hg_(1-x)Mn_xTe的磁化强度[J]. Chin. J. Semicond., 1989, 10(7): 529..Export: BibTex EndNote

陈辰嘉, 王学忠, 刘继周, R.R.Galazka. 窄禁带半磁半导体Hg_(1-x)Mn_xTe的磁化强度[J]. Chin. J. Semicond., 1989, 10(7): 529...

用Raman光谱研究掺氧多晶硅的微结构

王云珍, 潘尧令

Chin. J. Semicond. 1989, 10(7): 534-537

Abstract PDF Cited by ()

null. null[J]. Chin. Journal of Semiconductors, 1989, 10(7): 534.

王云珍, 潘尧令. 用Raman光谱研究掺氧多晶硅的微结构[J]. Chin. J. Semicond., 1989, 10(7): 534..Export: BibTex EndNote

王云珍, 潘尧令. 用Raman光谱研究掺氧多晶硅的微结构[J]. Chin. J. Semicond., 1989, 10(7): 534...

非均匀掺杂衬底MOS结构少子产生寿命的测量

黄庆安, 史保华, 顾英, 张德胜

Chin. J. Semicond. 1989, 10(7): 538-541

Abstract PDF Cited by ()

null. null[J]. Chin. Journal of Semiconductors, 1989, 10(7): 538.

黄庆安, 史保华, 顾英, 张德胜. 非均匀掺杂衬底MOS结构少子产生寿命的测量[J]. Chin. J. Semicond., 1989, 10(7): 538..Export: BibTex EndNote

黄庆安, 史保华, 顾英, 张德胜. 非均匀掺杂衬底MOS结构少子产生寿命的测量[J]. Chin. J. Semicond., 1989, 10(7): 538...

SI GaAS中S~+注入的电学特性

夏冠群, 关安民, 耿海阳, 王渭源

Chin. J. Semicond. 1989, 10(7): 542-546

Abstract PDF Cited by ()

null. null[J]. Chin. Journal of Semiconductors, 1989, 10(7): 542.

夏冠群, 关安民, 耿海阳, 王渭源. SI GaAS中S~+注入的电学特性[J]. Chin. J. Semicond., 1989, 10(7): 542..Export: BibTex EndNote

夏冠群, 关安民, 耿海阳, 王渭源. SI GaAS中S~+注入的电学特性[J]. Chin. J. Semicond., 1989, 10(7): 542...

短沟道MOS FET亚阈值电流的解析模型

陈登元, 汤庭鳌, C.A.Paz de Araujo

Chin. J. Semicond. 1989, 10(7): 547-552

Abstract PDF Cited by ()

null. null[J]. Chin. Journal of Semiconductors, 1989, 10(7): 547.

陈登元, 汤庭鳌, C.A.Paz de Araujo. 短沟道MOS FET亚阈值电流的解析模型[J]. Chin. J. Semicond., 1989, 10(7): 547..Export: BibTex EndNote

陈登元, 汤庭鳌, C.A.Paz de Araujo. 短沟道MOS FET亚阈值电流的解析模型[J]. Chin. J. Semicond., 1989, 10(7): 547...

GaAsP混晶中Fe杂质能级的无序分裂

黄启圣

Chin. J. Semicond. 1989, 10(7): 553-555

Abstract PDF Cited by ()

null. null[J]. Chin. Journal of Semiconductors, 1989, 10(7): 553.

黄启圣. GaAsP混晶中Fe杂质能级的无序分裂[J]. Chin. J. Semicond., 1989, 10(7): 553..Export: BibTex EndNote

黄启圣. GaAsP混晶中Fe杂质能级的无序分裂[J]. Chin. J. Semicond., 1989, 10(7): 553...

Si/GaP(111)和(-1-1-1)界面的研究

黄春晖

Chin. J. Semicond. 1989, 10(7): 556-560

Abstract PDF Cited by ()

null. null[J]. Chin. Journal of Semiconductors, 1989, 10(7): 556.

黄春晖. Si/GaP(111)和(-1-1-1)界面的研究[J]. Chin. J. Semicond., 1989, 10(7): 556..Export: BibTex EndNote

黄春晖. Si/GaP(111)和(-1-1-1)界面的研究[J]. Chin. J. Semicond., 1989, 10(7): 556...

硅中氢分子和空位型缺陷间的相互作用

施天生, 白国仁

Chin. J. Semicond. 1989, 10(7): 561-563

Abstract PDF Cited by ()

null. null[J]. Chin. Journal of Semiconductors, 1989, 10(7): 561.

施天生, 白国仁. 硅中氢分子和空位型缺陷间的相互作用[J]. Chin. J. Semicond., 1989, 10(7): 561..Export: BibTex EndNote

施天生, 白国仁. 硅中氢分子和空位型缺陷间的相互作用[J]. Chin. J. Semicond., 1989, 10(7): 561...

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