Chin. J. Semicond. > 1989, Volume 10 > Issue 7 > 538-541
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非均匀掺杂衬底MOS结构少子产生寿命的测量

黄庆安 , 史保华 , 顾英 and 张德胜

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    Received: 19 August 2015 Revised: Online: Published: 01 July 1989

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      Article Navigation >  Journal of Semiconductors  > 1989  >  10(7): 538-541
      黄庆安, 史保华, 顾英, 张德胜. 非均匀掺杂衬底MOS结构少子产生寿命的测量[J]. 半导体学报(英文版), 1989, 10(7): 538-541.
      Citation:
      黄庆安, 史保华, 顾英, 张德胜. 非均匀掺杂衬底MOS结构少子产生寿命的测量[J]. 半导体学报(英文版), 1989, 10(7): 538-541.
      shu

      • Received Date: 2015-08-19

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