Chin. J. Semicond. > 1989, Volume 10 > Issue 7 > 542-546
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SI GaAS中S~+注入的电学特性

夏冠群 , 关安民 , 耿海阳 and 王渭源

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    Received: 19 August 2015 Revised: Online: Published: 01 July 1989

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      Article Navigation >  Journal of Semiconductors  > 1989  >  10(7): 542-546
      夏冠群, 关安民, 耿海阳, 王渭源. SI GaAS中S~+注入的电学特性[J]. 半导体学报(英文版), 1989, 10(7): 542-546.
      Citation:
      夏冠群, 关安民, 耿海阳, 王渭源. SI GaAS中S~+注入的电学特性[J]. 半导体学报(英文版), 1989, 10(7): 542-546.
      shu

      • Received Date: 2015-08-19

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