Chin. J. Semicond. > 1989, Volume 10 > Issue 7 > 497-502
|

CONTENTS

射频溅射CoMnNi氧化物薄膜结构研究

谭辉 , 陶明德 , 韩英 and 张寒

+ Author Affiliations

PDF

    • Search

    Advanced Search >>

    GET CITATION

    shu

    Export: BibTex EndNote

    Article Metrics

    Article views: 2328 Times PDF downloads: 633 Times Cited by: 0 Times

    History

    Received: 19 August 2015 Revised: Online: Published: 01 July 1989

    Catalog

      Email This Article

      User name:
      Email:*请输入正确邮箱
      Code:*验证码错误
      Send
      Article Navigation >  Journal of Semiconductors  > 1989  >  10(7): 497-502
      谭辉, 陶明德, 韩英, 张寒. 射频溅射CoMnNi氧化物薄膜结构研究[J]. 半导体学报(英文版), 1989, 10(7): 497-502.
      Citation:
      谭辉, 陶明德, 韩英, 张寒. 射频溅射CoMnNi氧化物薄膜结构研究[J]. 半导体学报(英文版), 1989, 10(7): 497-502.
      shu

      • Received Date: 2015-08-19

      Catalog

        Journal of Semiconductors © 2017 All Rights Reserved   京ICP备05085259号-2

        /

        DownLoad:  Full-Size Img  PowerPoint
        Return
        Return