Chin. J. Semicond. > 1989, Volume 10 > Issue 7 > 519-524
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离子束增强沉积制备氮化硅薄膜的计算机模拟

周建坤 , 陈酉善 , 柳襄怀 , 杨根庆 and 邹世昌

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    Received: 19 August 2015 Revised: Online: Published: 01 July 1989

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      Article Navigation >  Journal of Semiconductors  > 1989  >  10(7): 519-524
      周建坤, 陈酉善, 柳襄怀, 杨根庆, 邹世昌. 离子束增强沉积制备氮化硅薄膜的计算机模拟[J]. 半导体学报(英文版), 1989, 10(7): 519-524.
      Citation:
      周建坤, 陈酉善, 柳襄怀, 杨根庆, 邹世昌. 离子束增强沉积制备氮化硅薄膜的计算机模拟[J]. 半导体学报(英文版), 1989, 10(7): 519-524.
      shu

      • Received Date: 2015-08-19

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