Chin. J. Semicond. > 1989, Volume 10 > Issue 7 > 561-563

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硅中氢分子和空位型缺陷间的相互作用

施天生 and 白国仁

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    Received: 19 August 2015 Revised: Online: Published: 01 July 1989

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      Article Navigation >  Journal of Semiconductors  > 1989  >  10(7): 561-563
      施天生, 白国仁. 硅中氢分子和空位型缺陷间的相互作用[J]. 半导体学报(英文版), 1989, 10(7): 561-563.
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      施天生, 白国仁. 硅中氢分子和空位型缺陷间的相互作用[J]. 半导体学报(英文版), 1989, 10(7): 561-563.
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      • Received Date: 2015-08-19

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