Chin. J. Semicond. > 1989, Volume 10 > Issue 7 > 529-533
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窄禁带半磁半导体Hg_(1-x)Mn_xTe的磁化强度

陈辰嘉 , 王学忠 , 刘继周 and R.R.Galazka

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    Received: 19 August 2015 Revised: Online: Published: 01 July 1989

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      Article Navigation >  Journal of Semiconductors  > 1989  >  10(7): 529-533
      陈辰嘉, 王学忠, 刘继周, R.R.Galazka. 窄禁带半磁半导体Hg_(1-x)Mn_xTe的磁化强度[J]. 半导体学报(英文版), 1989, 10(7): 529-533.
      Citation:
      陈辰嘉, 王学忠, 刘继周, R.R.Galazka. 窄禁带半磁半导体Hg_(1-x)Mn_xTe的磁化强度[J]. 半导体学报(英文版), 1989, 10(7): 529-533.
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      • Received Date: 2015-08-19

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