Chin. J. Semicond. > 1996, Volume 17 > Issue 9 > 717-720

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As~＋注入Si_（1－x）Ge_x的快速退火行为

邹吕凡，王占国，孙殿照，何沙，范缇文，刘学锋，张靖巍

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    Received: 18 August 2015 Revised: Online: Published: 01 September 1996

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      Article Navigation >  Journal of Semiconductors  > 1996  >  17(9): 717-720
      邹吕凡，王占国，孙殿照，何沙，范缇文，刘学锋，张靖巍. As~＋注入Si_（1－x）Ge_x的快速退火行为[J]. 半导体学报(英文版), 1996, 17(9): 717-720.
      Citation:
      邹吕凡，王占国，孙殿照，何沙，范缇文，刘学锋，张靖巍. As~＋注入Si_（1－x）Ge_x的快速退火行为[J]. 半导体学报(英文版), 1996, 17(9): 717-720.
      shu

      • Received Date: 2015-08-18

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