Chin. J. Semicond. > 1997, Volume 18 > Issue 4 > 308-312
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多晶硅发射极晶体管的集电区补偿注入技术

何美华 , 张利春 and 王阳元

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    Received: 19 August 2015 Revised: Online: Published: 01 April 1997

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      Article Navigation >  Journal of Semiconductors  > 1997  >  18(4): 308-312
      何美华, 张利春, 王阳元. 多晶硅发射极晶体管的集电区补偿注入技术[J]. 半导体学报(英文版), 1997, 18(4): 308-312.
      Citation:
      何美华, 张利春, 王阳元. 多晶硅发射极晶体管的集电区补偿注入技术[J]. 半导体学报(英文版), 1997, 18(4): 308-312.
      shu

      • Received Date: 2015-08-19

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