Chin. J. Semicond. > 1997, Volume 18 > Issue 4 > 313-316
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AlInGaAs/AlGaAs Strained Quantum Well Lasers Grown by Molecular Beam Epitaxy

杨国文 , 徐遵图 , 徐俊英 , 张敬明 , 肖建伟 and 陈良蕙

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    Received: 19 August 2015 Revised: Online: Published: 01 April 1997

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      Article Navigation >  Journal of Semiconductors  > 1997  >  18(4): 313-316
      杨国文, 徐遵图, 徐俊英, 张敬明, 肖建伟, 陈良蕙. AlInGaAs/AlGaAs Strained Quantum Well Lasers Grown by Molecular Beam Epitaxy[J]. 半导体学报(英文版), 1997, 18(4): 313-316.
      Citation:
      杨国文, 徐遵图, 徐俊英, 张敬明, 肖建伟, 陈良蕙. AlInGaAs/AlGaAs Strained Quantum Well Lasers Grown by Molecular Beam Epitaxy[J]. 半导体学报(英文版), 1997, 18(4): 313-316.
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      • Received Date: 2015-08-19

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