Chin. J. Semicond. > 1997, Volume 18 > Issue 4 > 317-320

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Si(111)碳化层中的SiC结晶

雷天民 , 陈治明 , 马剑平 and 余明斌

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    Received: 19 August 2015 Revised: Online: Published: 01 April 1997

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      Article Navigation >  Journal of Semiconductors  > 1997  >  18(4): 317-320
      雷天民, 陈治明, 马剑平, 余明斌. Si(111)碳化层中的SiC结晶[J]. 半导体学报(英文版), 1997, 18(4): 317-320.
      Citation:
      雷天民, 陈治明, 马剑平, 余明斌. Si(111)碳化层中的SiC结晶[J]. 半导体学报(英文版), 1997, 18(4): 317-320.
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      • Received Date: 2015-08-19

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