Temperature Dependence of Vacuum Rabi Splitting in a Single Quantum Dot-Semiconductor Microcavity

Zhu Kadi; Li Waisang

Chin. J. Semicond. > 2006, Volume 27 > Issue 3 > 489-493

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Temperature Dependence of Vacuum Rabi Splitting in a Single Quantum Dot-Semiconductor Microcavity

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Abstract: The quantum dynamics of an exciton dressed by acoustic phonons in an optically driven quantum dot-semiconductor microcavity at finite temperatures is investigated theoretically by quantum optics methods. It is shown that the temperature dependence of the vacuum Rabi splitting is 22g×exp［-∑qλq(Nq+1/2)］,where Nq=1/［exp(ωq/kBT)-1］ is the phonon population, g is the single-photon Rabi frequency, and λq corresponds to exciton-phonon coupling.

Key words: semiconductor microcavity, quantum dot, exciton, Vacuum Rabi splitting

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Zhu Kadi, Li Waisang. Temperature Dependence of Vacuum Rabi Splitting in a Single Quantum Dot-Semiconductor Microcavity[J]. Journal of Semiconductors, 2006, 27(3): 489-493.

Zhu K D, Li W S. Temperature Dependence of Vacuum Rabi Splitting in a Single Quantum Dot-Semiconductor Microcavity[J]. Chin. J. Semicond., 2006, 27(3): 489.

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Received: 20 August 2015 Revised: Online: Published: 01 March 2006

The quantum dynamics of an exciton dressed by acoustic phonons in an optically driven quantum dot-semiconductor microcavity at finite temperatures is investigated theoretically by quantum optics methods. It is shown that the temperature dependence of the vacuum Rabi splitting is 22g×exp［-∑qλq(Nq+1/2)］,where Nq=1/［exp(ωq/kBT)-1］ is the phonon population, g is the single-photon Rabi frequency, and λq corresponds to exciton-phonon coupling.

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