| Citation: |
Zhou Jingtao, Zhu Hongliang, Cheng Yuanbing, Wang Baojun, Wang Wei. Low Energy Helium Ion Implantation Induced Quantum-Well Intermixing[J]. Journal of Semiconductors, 2007, 28(1): 47-51.
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Zhou J T, Zhu H L, Cheng Y B, Wang B J, Wang W. Low Energy Helium Ion Implantation Induced Quantum-Well Intermixing[J]. Chin. J. Semicond., 2007, 28(1): 47.
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Low Energy Helium Ion Implantation Induced Quantum-Well Intermixing
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Abstract
Low energy helium ion implantation into InP heterostructures that induces controlled quantum well intermixing is reported and used for the first time.A significant blue-shift enhanced by a moderate RTA process is achieved.An intermixed FP laser is fabricated.Compared to the unimplanted laser,the lasing wavelength of the intermixed laser blue-shifts by 37nm. -
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