| Citation: |
Fu Liming, Yang Deren, Ma Xiangyang, Guo Yang, Que Duanlin. Dissolution at High Temperature and Re-Growth of Oxygen Precipitation in Czochralski Silicon Wafer[J]. Journal of Semiconductors, 2007, 28(1): 52-55.
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Fu L M, Yang D R, Ma X Y, Guo Y, Que D L. Dissolution at High Temperature and Re-Growth of Oxygen Precipitation in Czochralski Silicon Wafer[J]. Chin. J. Semicond., 2007, 28(1): 52.
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Dissolution at High Temperature and Re-Growth of Oxygen Precipitation in Czochralski Silicon Wafer
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Abstract
The effects of high temperature treatment by conventional furnace annealing and rapid thermal processing (RTP) on the dissolution and the re-growth behavior of oxygen precipitation in Czochralski (CZ) silicon wafers are investigated.It is found that RTP is a rapid and effective way to dissolve oxygen precipitation in comparison with conventional furnace annealing.After dissolution treatment by RTP,the density of bulk micro-defects (BMDs) increases remarkably during the subsequent anneal for the re-growth of oxygen precipitation,while after dissolution treatment by conventional furnace annealing,the density of BMDs is nearly unchanged during the subsequent annealing for the re-growth of oxygen precipitation.The higher the subsequent annealing temperature,the faster the re-growth of oxygen precipitation in silicon wafers subjected to the dissolution treatment.-
Keywords:
- Czochralski silicon,
- oxygen precipitation,
- dissolution,
- re-growth
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References
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Proportional views
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