Chin. J. Semicond. > 2005, Volume 26 > Issue 8 > 1514-1518
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Yield Modeling of Rectangular Defect Outline

Wang , Junping , and , Hao and Yue

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Key words: real defect, rectangular defect model, critical area, yield modeling

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    Received: 18 August 2015 Revised: Online: Published: 01 August 2005

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      Article Navigation >  Journal of Semiconductors  > 2005  >  26(8): 1514-1518
      Wang, Junping, and, Hao, Yue. Yield Modeling of Rectangular Defect Outline[J]. 半导体学报(英文版), 2005, 26(8): 1514-1518.
      Citation:
      Wang, Junping, and, Hao, Yue. Yield Modeling of Rectangular Defect Outline[J]. 半导体学报(英文版), 2005, 26(8): 1514-1518.
      shu

      • Received Date: 2015-08-18

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