| Citation: |
Zhong Sheng, Xu Xiaoqiu, Sun Lijie, Lin Bixia, Fu Zhuxi. Influence of the Annealing Temperature on the Structural and Optical Properties of N-Doped ZnO Films[J]. Journal of Semiconductors, 2008, 29(7): 1330-1333.
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Zhong S, Xu X Q, Sun L J, Lin B X, Fu Z X. Influence of the Annealing Temperature on the Structural and Optical Properties of N-Doped ZnO Films[J]. J. Semicond., 2008, 29(7): 1330.
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Influence of the Annealing Temperature on the Structural and Optical Properties of N-Doped ZnO Films
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Abstract
Nitrogen-doped ZnO (ZnO:N) films are prepared by thermal oxidation of sputtered Zn3N2 layers on Al2O3 substrate.The dependence of the structural and optical properties of the ZnO:N films on annealing temperature is investigated.X-ray Diffraction (XRD) results illustrate that the as-sputtered Zn3N2 films can be transformed into ZnO:N films after annealing at 600℃ and above.X-ray photoelectron spectroscopy (XPS) reveals that nitrogen has two chemical states in the ZnO:N films:(N2)o and No,which denote substitution of molecular N for O and atomic N for O,respectively.Hall effect measurements illustrate that the hole concentration in ZnO:N films annealed at 700℃ is the highest.The FA and DAP transition peaks are observed in low temperature photoluminescence spectra,from which the nitrogen acceptor binding energy can be obtained.-
Keywords:
- thermal oxidation,
- ZnO,
- XPS,
- acceptor binding energy
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References
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Proportional views
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