| Citation: |
He Jinxiao, Duan Yao, Wang Xiaofeng, Cui Junpeng, Zeng Yiping, Li Jinmin. Role of a ZnAl2O4 Buffer Layer in the Metal Vapor Phase Epitaxy of ZnO[J]. Journal of Semiconductors, 2008, 29(7): 1334-1337.
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He J X, Duan Y, Wang X F, Cui J P, Zeng Y P, Li J M. Role of a ZnAl2O4 Buffer Layer in the Metal Vapor Phase Epitaxy of ZnO[J]. J. Semicond., 2008, 29(7): 1334.
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Role of a ZnAl2O4 Buffer Layer in the Metal Vapor Phase Epitaxy of ZnO
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Abstract
High quality ZnO film of about 10μm thick has been successfully grown on a ZnAl2O4 buffer layer via metal vapor phase epitaxy (MVPE).The ZnAl2O4 buffer layer was prepared by high temperature annealing ZnO thin film grown by the sol-gel method.Double crystal x-ray diffraction (DCXRD) analysis indicates that unwanted orientations in the film are eliminated using the buffer layer and that the full width at half maximum (FWHM) of the (0002) rocking curve dramatically drops from 1371" to 342" .To our knowledge,this is the first report that a ZnAl2O4 buffer layer can enhance the quality of ZnO film grown by metal vapor phase epitaxy. -
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