A Novel Sampling Precision and Rate Programmable Pipeline ADCwith Improved Current Modulated Power Scaling

Wei Qi; Yin Xiumei; Yang Bin; Yang Huazhong

J. Semicond. > 2008, Volume 29 > Issue 5 > 1010-1015

PAPERS

A Novel Sampling Precision and Rate Programmable Pipeline ADCwith Improved Current Modulated Power Scaling

Wei Qi, Yin Xiumei, Yang Bin and Yang Huazhong

+ Author Affiliations

Abstract: A conversion-precision and sampling-rate programmable pipeline analog-to-digital converter (ADC),without adjusting the bias current of operational amplifiers,is presented in this paper.This ADC achieves a conversion-precision of 8 to 11bits and a sampling-rate from 400k to 40MSa/s.To increase the power-on speed and reduce the power consumption,a novel pre-charged switched operational amplifier is proposed.The power can be significantly reduced by adopting an improved current modulated power scaling (CMPS) technique,the proposed switched operational amplifier,a SHA-less technique,and a dynamic comparator.The ADC is designed in a 1.8V 1P6M 0.18μm CMOS process.Simulation results indicate that the ADC exhibits a spurious free dynamic range (SFDR) of 81dB and a signal-to-noise and distortion ratio (SNDR) of 67dB.Programmed at 11bits and 40MSa/s,the ADC consumes 29mW when a 19.02MHz sine signal is fed-in.

Key words: pipeline, ADC, switched operational amplifier

1	Modelling and optical response of a compressive-strained AlGaN/GaN quantum well laser diode A. Menani, L. Dehimi, S. Dehimi, F. Pezzimenti Journal of Semiconductors, 2020, 41(6): 062301. doi: 10.1088/1674-4926/41/6/062301
2	The energy-level and vibrational frequency properties of a polaron weak-coupled in a quantum well with asymmetrical Gaussian confinement potential Wei Xiao, Jinglin Xiao Journal of Semiconductors, 2019, 40(4): 042901. doi: 10.1088/1674-4926/40/4/042901
3	Layer-number dependent high-frequency vibration modes in few-layer transition metal dichalcogenides induced by interlayer couplings Qing-Hai Tan, Xin Zhang, Xiang-Dong Luo, Jun Zhang, Ping-Heng Tan, et al. Journal of Semiconductors, 2017, 38(3): 031006. doi: 10.1088/1674-4926/38/3/031006
4	Magnetopolaron effects on the optical absorptions in a parabolic quantum dot Shihua Chen Journal of Semiconductors, 2016, 37(9): 092004. doi: 10.1088/1674-4926/37/9/092004
5	Electric and magnetic optical polaron in quantum dot——Part 1: strong coupling A. J. Fotue, N. Issofa, M. Tiotsop, S. C. Kenfack, M. P. Tabue Djemmo, et al. Journal of Semiconductors, 2015, 36(7): 072001. doi: 10.1088/1674-4926/36/7/072001
6	Electro-magnetic weak coupling optical polaron and temperature effect in quantum dot M. Tiotsop, A. J. Fotue, S. C. Kenfack, N. Issofa, A. V. Wirngo, et al. Journal of Semiconductors, 2015, 36(10): 102001. doi: 10.1088/1674-4926/36/10/102001
7	Magnetic field and temperature dependence of the properties of the ground state of the strong-coupling bound magnetopolaron in quantum rods with hydrogenic impurity Wei Xin, Yuwei Zhao, Chao Han, Eerdunchaolu Journal of Semiconductors, 2013, 34(5): 052001. doi: 10.1088/1674-4926/34/5/052001
8	Fabrication and characterization of a low frequency electromagnetic energy harvester Abu Riduan Md. Foisal, Gwiy-Sang Chung Journal of Semiconductors, 2012, 33(7): 074001. doi: 10.1088/1674-4926/33/7/074001
9	Dielectric confinement on exciton binding energy and nonlinear optical properties in a strained Zn_{1-x_in}Mg_{x_in}Se/Zn_{1-x_out}Mg_{x_out}Se quantum well J. Abraham Hudson Mark, A. John Peter Journal of Semiconductors, 2012, 33(9): 092001. doi: 10.1088/1674-4926/33/9/092001
10	MOS Capacitance-Voltage Characteristics II. Sensitivity of Electronic Trapping at Dopant Impurity from Parameter Variations Jie Binbin, Sah Chihtang Journal of Semiconductors, 2011, 32(12): 121001. doi: 10.1088/1674-4926/32/12/121001
11	MOS Capacitance–Voltage Characteristics from Electron-Trapping at Dopant Donor Impurity Jie Binbin, Sah Chihtang Journal of Semiconductors, 2011, 32(4): 041001. doi: 10.1088/1674-4926/32/4/041001
12	Binding energies of shallow impurities in asymmetric strained wurtzite Al_xGa_1-xN/GaN/Al_yGa_1-yN quantum wells Ha Sihua, Ban Shiliang, Zhu Jun Journal of Semiconductors, 2011, 32(4): 042001. doi: 10.1088/1674-4926/32/4/042001
13	Property comparison of polarons in zinc-blende and wurtzite GaN/AlN quantum wells Zhu Jun, Ban Shiliang, Ha Sihua Journal of Semiconductors, 2011, 32(11): 112002. doi: 10.1088/1674-4926/32/11/112002
14	Influence of the Electric Field on the Properties of the Bound Magnetopolaron in GaAs Semiconductor Quantum Wells Shan Shuping, Xiao Jinglin Journal of Semiconductors, 2008, 29(3): 438-441.
15	Characteristics and Structural Optimization of Multi-Quantum-Well Structure of GaN-Based Laser Diode Wei Qiyuan, Li Ti, Wang Yanjie, Chen Weihua, Li Rui, et al. Chinese Journal of Semiconductors , 2007, 28(S1): 471-474.
16	Room Temperature Continuous Wave Quantum Well Lasers Zhao Huan, Du Yun, Ni Haiqiao, Zhang Shiyong, Han Qin, et al. Chinese Journal of Semiconductors , 2007, 28(S1): 486-488.
17	Calculation of the Efficiency of GaAs Quantum Well Solar Cells Wang Jianbo, Xiang Bing, Lou Chaogang, Zhang Xiaobing, Lei Wei, et al. Chinese Journal of Semiconductors , 2006, 27(6): 1038-1041.
18	Bound Polaron in a Quantum Well Under an Electric Field Chen Weili, Xiao Jinglin Chinese Journal of Semiconductors , 2006, 27(5): 787-791.
19	Growth and Optical Properties of ZnO Films and Quantum Wells Zhang Baoping, Kang Junyong, Yu Jinzhong, Wang Qiming, Segawa Yusaburo, et al. Chinese Journal of Semiconductors , 2006, 27(4): 613-622.
20	Compressively Strained InGaAs/InGaAsP Quantum Well Distributed Feedback Laser at 1.74μm Chinese Journal of Semiconductors , 2005, 26(9): 1688-1691.

Search

GET CITATION

Eerdunchaolu, Wuyunqimuge, Xu Qiu, Bai Xufang. Properties of Quasi-Two-Dimensional Strong-CouplingMagnetopolarons in Magnetic Fields[J]. Journal of Semiconductors, 2006, 27(5): 824-829.

E E D C L, Wu Y Q M G, Xu Q, Bai X F. Properties of Quasi-Two-Dimensional Strong-CouplingMagnetopolarons in Magnetic Fields[J]. Chin. J. Semicond., 2006, 27(5): 824.

Export: BibTex EndNote

Article Metrics

Article views: 3114 Times PDF downloads: 1567 Times Cited by: 0 Times

History

Received: 18 August 2015 Revised: 04 December 2007 Online: Published: 01 May 2008

A conversion-precision and sampling-rate programmable pipeline analog-to-digital converter (ADC),without adjusting the bias current of operational amplifiers,is presented in this paper.This ADC achieves a conversion-precision of 8 to 11bits and a sampling-rate from 400k to 40MSa/s.To increase the power-on speed and reduce the power consumption,a novel pre-charged switched operational amplifier is proposed.The power can be significantly reduced by adopting an improved current modulated power scaling (CMPS) technique,the proposed switched operational amplifier,a SHA-less technique,and a dynamic comparator.The ADC is designed in a 1.8V 1P6M 0.18μm CMOS process.Simulation results indicate that the ADC exhibits a spurious free dynamic range (SFDR) of 81dB and a signal-to-noise and distortion ratio (SNDR) of 67dB.Programmed at 11bits and 40MSa/s,the ADC consumes 29mW when a 19.02MHz sine signal is fed-in.

A Novel Sampling Precision and Rate Programmable Pipeline ADCwith Improved Current Modulated Power Scaling

Search

GET CITATION

Share:

Article Metrics

History

Catalog

Email This Article

A Novel Sampling Precision and Rate Programmable Pipeline ADCwith Improved Current Modulated Power Scaling

Abstract

References

Proportional views

Catalog

A Novel Sampling Precision and Rate Programmable Pipeline ADCwith Improved Current Modulated Power Scaling

Search

GET CITATION

Share:

Article Metrics

History

Catalog

Email This Article

A Novel Sampling Precision and Rate Programmable Pipeline ADCwith Improved Current Modulated Power Scaling

Abstract

References

Proportional views

Catalog

Export File

Citation

Format

Content