Chin. J. Semicond. > 1983, Volume 4 > Issue 5 > 422-431
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平面Gunn器件中静止畴的形成和转变

王守武 , 郑一阳 , 郗小林 , 潘国雄 and 张进昌

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    Received: 20 August 2015 Revised: Online: Published: 01 May 1983

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      Article Navigation >  Journal of Semiconductors  > 1983  >  4(5): 422-431
      王守武, 郑一阳, 郗小林, 潘国雄, 张进昌. 平面Gunn器件中静止畴的形成和转变[J]. 半导体学报(英文版), 1983, 4(5): 422-431.
      Citation:
      王守武, 郑一阳, 郗小林, 潘国雄, 张进昌. 平面Gunn器件中静止畴的形成和转变[J]. 半导体学报(英文版), 1983, 4(5): 422-431.
      shu

      • Received Date: 2015-08-20

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