| Citation: |
Liu Mengxin, Han Zhengsheng, Li Duoli, Liu Gang, Zhao Chaorong, Zhao Fazhan. A Total Dose Radiation Hardened PDSOI CMOS 3-Line to 8-Line Decoder[J]. Journal of Semiconductors, 2008, 29(6): 1036-1039.
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Liu M X, Han Z S, Li D L, Liu G, Zhao C R, Zhao F Z. A Total Dose Radiation Hardened PDSOI CMOS 3-Line to 8-Line Decoder[J]. J. Semicond., 2008, 29(6): 1036.
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A Total Dose Radiation Hardened PDSOI CMOS 3-Line to 8-Line Decoder
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Abstract
The first domestic total dose hardened 2μm partially depleted silicon-on-insulator (PDSOI) CMOS 3-line to 8-line decoder fabricated in SIMOX is demonstrated.The radiation performance is characterized by transistor threshold voltage shifts,circuit static leakage currents,and I-V curves as a function of total dose up to 3E5rad(Si).The worst case threshold voltage shifts of the front channels are less than 20mV for nMOS transistors at 3E5rad(Si) and follow-up irradiation and less than 70mV for the pMOS transistors.Furthermore,no significant radiation induced leakage currents and functional degeneration are observed.-
Keywords:
- PDSOI,
- decoder,
- total dose,
- radiation
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References
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Proportional views
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