| Citation: |
Yu Tongjun, Kang Xiangning, Qin Zhixin, Chen Zhizhong, Yang Zhijian, Hu Xiaodong, Zhang Guoyi. Strain Effect on Photoluminescence from InGaN/GaN and InGaN/AlGaN MQWs[J]. Journal of Semiconductors, 2006, 27(S1): 20-24.
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Yu T J, Kang X N, Qin Z X, Chen Z Z, Yang Z J, Hu X D, Zhang G Y. Strain Effect on Photoluminescence from InGaN/GaN and InGaN/AlGaN MQWs[J]. Chin. J. Semicond., 2006, 27(13): 20.
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Strain Effect on Photoluminescence from InGaN/GaN and InGaN/AlGaN MQWs
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Abstract
Photoluminescence,HR-XRD,and Raman scattering spectra of InGaN/GaN MQWs and InGaN/AlGaN on sapphire and membranes with no substrate fabricated by laser lift-off are studied.In contrast to the emission peak from the membrane samples of InGaN/GaN MQWs,which blue-shifts after annealing at 700℃,a red-shift of the PL peak position in the InGaN/AlGaN MQW membrane sample is observed,showing different strain effects in these MQWs.In Raman scattering spectra,the InGaN/GaN MQW film without sapphire substrate has a lower E2 mode frequency (567.5cm-1) than that of the films with substrate (569.1cm-1),which indicates that the compressive stress in the films is released partially when the sapphire substrate is taken off.-
Keywords:
- photoluminescence,
- InGaN,
- AlGaN,
- MQWs,
- strain
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References
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Proportional views
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