| Citation: |
Yu Linwei, Chen Kunji, Song Jie, Wang Jiumin, Wang Xiang, Li Wei, Huang Xinfan. Room Temperature Resonant Tunneling and Negative DifferentialResistance Effects in a Self-Assembed Si Quantum Dot Array[J]. Journal of Semiconductors, 2006, 27(S1): 15-19.
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Yu L W, Chen K J, Song J, Wang J M, Wang X, Li W, Huang X F. Room Temperature Resonant Tunneling and Negative DifferentialResistance Effects in a Self-Assembed Si Quantum Dot Array[J]. Chin. J. Semicond., 2006, 27(13): 15.
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Room Temperature Resonant Tunneling and Negative DifferentialResistance Effects in a Self-Assembed Si Quantum Dot Array
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Abstract
We report the room temperature resonant tunneling and negative differential resistance (NDR) effects in a self-assembled Si quantum dot (Si-QDs) array.The double-layer structure of Al/SiO2/Si-QDs/SiO2/p-Si substrate is fabricated by layer-by-layer deposition and in situ plasma oxidation in a plasma-enhanced chemical vapor deposition (PECVD) system.Obvious NDR effects are directly observed in the current-voltage characteristics,and similar peak structures at the same voltage are also identified in the capacitance-voltage characteristics.Both of them are attributed to the resonant tunneling and charging dynamics in the Si-QD array.Moreover,the major features,such as the scan-rate and scan-direction dependences of the peak structure,are investigated,and the underlying mechanism is found to be quite different from that of a quantum well structure.Based on a master-equation numerical model,the resonant tunneling and charging dynamics together with the unique features can be satisfactorily explained and reproduced.-
Keywords:
- Si quantum dot array,
- NDR,
- resonant tunneling
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References
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