| Citation: |
Zhong Zhiqin, Gong Min, Wang Ou, Yu Zhou, Yang Zhimei, Xu Shijie, Chen Xudong, Ling Chichung, Fung Hanyuan, Beling C D. Photoluminescence of Electron- and Neutron-Irradiated n-Type 6H-SiC[J]. Journal of Semiconductors, 2006, 27(S1): 11-14.
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Zhong Z Q, Gong M, Wang O, Yu Z, Yang Z M, Xu S J, Chen X D, Ling C C N, Fu N H Y, Beling C D. Photoluminescence of Electron- and Neutron-Irradiated n-Type 6H-SiC[J]. Chin. J. Semicond., 2006, 27(13): 11.
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Photoluminescence of Electron- and Neutron-Irradiated n-Type 6H-SiC
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Abstract
n-type 6H-SiC materials irradiated with electrons having energies of Ee=1.7,0.5,and 0.4MeV and neutrons are studied via low temperature photoluminescence.For Ee≥0.5MeV electron-irradiated and neutron-irradiated samples,the LTPL emission lines S1/S2/S3 at 478.6/483.3/486.1nm are observed for the first time.Thermal annealing studies show that the defects S1/S2/S3 disappear at 500℃.However,the well-known D1-center is only detected for annealing temperatures over 700℃.By considering the threshold displacement energies of Emin(C) and Emin(Si) and thermal annealing behavior,it is found that the defects S1/S2/S3 are a set of silicon-related primary defects and the D1-center is a kind of secondary defect.-
Keywords:
- 6H-SiC,
- irradiation,
- LTPL,
- defects
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References
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Proportional views
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