Nano Electrical Devices and Integration

Liu Ming; Chen Baoqin; Xie Changqing; 王丛舜; Wang Congshun; Long Shibing; Xu Qiuxia; 易里成荣; Li Zhigang; Yili Chengrong

Key Laboratory of Nano-Process and New Type of Devices Integrated Technology,Institute of Microelectronics, Chinese Academy of Sciences,Beijing 100029, China
Key Laboratory of Nano-Process and New Type of Devices Integrated Technology,Institute of Microelectronics, Chinese Academy of Sciences,Beijing 100029, China
Key Laboratory of Nano-Process and New Type of Devices Integrated Technology,Institute of Microelectronics, Chinese Academy of Sciences,Beijing 100029, China
Key Laboratory of Nano-Process and New Type of Devices Integrated Technology,Institute of Microelectronics, Chinese Academy of Sciences,Beijing 100029, China
Key Laboratory of Nano-Process and New Type of Devices Integrated Technology,Institute of Microelectronics, Chinese Academy of Sciences,Beijing 100029, China
Key Laboratory of Nano-Process and New Type of Devices Integrated Technology,Institute of Microelectronics, Chinese Academy of Sciences,Beijing 100029, China
Key Laboratory of Nano-Process and New Type of Devices Integrated Technology,Institute of Microelectronics, Chinese Academy of Sciences,Beijing 100029, China
Key Laboratory of Nano-Process and New Type of Devices Integrated Technology,Institute of Microelectronics, Chinese Academy of Sciences,Beijing 100029, China
Key Laboratory of Nano-Process and New Type of Devices Integrated Technology,Institute of Microelectronics, Chinese Academy of Sciences,Beijing 100029, China
Key Laboratory of Nano-Process and New Type of Devices Integrated Technology,Institute of Microelectronics, Chinese Academy of Sciences,Beijing 100029, China

Article Navigation > Journal of Semiconductors > 2006 > 27(S1): 7-10

Liu Ming, Chen Baoqin, Xie Changqing, 王丛舜, Wang Congshun, Long Shibing, Xu Qiuxia, 易里成荣, Li Zhigang, Yili Chengrong. Nano Electrical Devices and Integration[J]. Journal of Semiconductors, 2006, 27(S1): 7-10. ****Liu M, Chen B Q, Xie C Q, Wang C S, Long S B, Xu Q X, Li Z G, Yi L C R. Nano Electrical Devices and Integration[J]. Chin. J. Semicond., 2006, 27(13): 7.

Citation:

Liu Ming, Chen Baoqin, Xie Changqing, 王丛舜, Wang Congshun, Long Shibing, Xu Qiuxia, 易里成荣, Li Zhigang, Yili Chengrong. Nano Electrical Devices and Integration[J]. Journal of Semiconductors, 2006, 27(S1): 7-10. ****

Liu M, Chen B Q, Xie C Q, Wang C S, Long S B, Xu Q X, Li Z G, Yi L C R. Nano Electrical Devices and Integration[J]. Chin. J. Semicond., 2006, 27(13): 7.

Citation:

Liu M, Chen B Q, Xie C Q, Wang C S, Long S B, Xu Q X, Li Z G, Yi L C R. Nano Electrical Devices and Integration[J]. Chin. J. Semicond., 2006, 27(13): 7.

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Nano Electrical Devices and Integration

Key Laboratory of Nano-Process and New Type of Devices Integrated Technology,Institute of Microelectronics, Chinese Academy of Sciences,Beijing 100029, China
Key Laboratory of Nano-Process and New Type of Devices Integrated Technology,Institute of Microelectronics, Chinese Academy of Sciences,Beijing 100029, China
Key Laboratory of Nano-Process and New Type of Devices Integrated Technology,Institute of Microelectronics, Chinese Academy of Sciences,Beijing 100029, China
Key Laboratory of Nano-Process and New Type of Devices Integrated Technology,Institute of Microelectronics, Chinese Academy of Sciences,Beijing 100029, China
Key Laboratory of Nano-Process and New Type of Devices Integrated Technology,Institute of Microelectronics, Chinese Academy of Sciences,Beijing 100029, China
Key Laboratory of Nano-Process and New Type of Devices Integrated Technology,Institute of Microelectronics, Chinese Academy of Sciences,Beijing 100029, China
Key Laboratory of Nano-Process and New Type of Devices Integrated Technology,Institute of Microelectronics, Chinese Academy of Sciences,Beijing 100029, China
Key Laboratory of Nano-Process and New Type of Devices Integrated Technology,Institute of Microelectronics, Chinese Academy of Sciences,Beijing 100029, China
Key Laboratory of Nano-Process and New Type of Devices Integrated Technology,Institute of Microelectronics, Chinese Academy of Sciences,Beijing 100029, China
Key Laboratory of Nano-Process and New Type of Devices Integrated Technology,Institute of Microelectronics, Chinese Academy of Sciences,Beijing 100029, China

Received Date: 2015-08-20

Abstract

Abstract

The progress and challenge on quantum mechanism nano-devices such as single-electron transistors (SET),resonant tuneling diodes(RTD), and molecular devices are investigated and discussed.The SET with CMOS compatible technology is successfully fabricated,and the Coulomb blockade effect is clearly observed.AlAs/GaAs/In0.1Ga0.9As/GaAs/AlAs double-barrier resonant tunneling diodes (DBRTDs) grown on semi-insulated GaAs substrate with molecular beam epitaxy are demonstrated.With ringed collector and thin barriers,the devices exhibit a maximum PVCR of 13.98 and a peak current density of 89kA/cm2 at room temperature.Finally,the progress of molecular memory with cross-bar structure is summarized.
- top-down fabrication,
- nano-device,
- single electron device,
- resonant tunneling device

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