| Citation: |
Kang Xiangning, Bao Kui, Chen Zhizhong, Xu Ke, Zhang Bei, Yu Tongjun, Nie Ruijuan, Zhang Guoyi. Vertical Electrode Structure GaN Based Light Emitting Diodes[J]. Journal of Semiconductors, 2007, 28(S1): 482-485.
****
Kang X N, Bao K, Chen Z Z, Xu K, Zhang B, Yu T J, Nie R J, Zhang G Y. Vertical Electrode Structure GaN Based Light Emitting Diodes[J]. Chin. J. Semicond., 2007, 28(S1): 482.
|
Vertical Electrode Structure GaN Based Light Emitting Diodes
-
Abstract
Laser lift-off technique (LLO) and wafer bounding technique were employed to transform GaN based light·emit- ting diode(LED)membrane from sapphire onto Si substrate.It can be derived from the result of high resolution X-ray diffraction(HRXRD)and cathodoluminescence spectra(CL) that the InGaN MQW structure and optical quality maintain as grown state.The red shift of the emission peak of GaN and InGaN/GaN MQW originating from the release of stress after the GaN based film depart from sapphire.In and Pd were used as metal bonding material.And combined with chip by chip lift.off mode。the integrated and uniform GaN film on Si can be realized.The vertical electrode GaN based LED can be fabrication. L-I characterization results showed sharp device improvements in terms of maximum allowable current and output power.-
Keywords:
- GaN,
- LED,
- laser lift-off,
- metal bonding,
- vertical electrode
-
References
-
Proportional views
DownLoad: