| Citation: |
Zhao Miao, Sun Mengxiang. Proton Irradiation on the Performance of the Superluminescent[J]. Journal of Semiconductors, 2007, 28(S1): 478-481.
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Zhao M, Sun M X. Proton Irradiation on the Performance of the Superluminescent[J]. Chin. J. Semicond., 2007, 28(S1): 478.
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Proton Irradiation on the Performance of the Superluminescent
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Abstract
The superluminescent was proton irradiated，the energy is 350keV and 1MeV，and the fluence is 1×10^12 and 1× 10^13p/cm2,respectively.the optical and electrical characters after irradiation are studied.when the SLD is irradiated in the similar proton fluence，the degradation of optical power with 350keV is higher than those with 1MeV.The resist irradiation in QWSLD is more excellent than the DHSLD.The ions range in the material is simulated，and the irradiation damage mechanism is discussed. -
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