| Citation: |
Zhang Junqin, Yang Yintang, Chai Changchun, Li Yuejin, Jia Hujun. Ohmic Contact Property of Ti/Al/Ni/Au on AlGaN/GaN Heterostructures for Application in Ultraviolet Detectors[J]. Journal of Semiconductors, 2008, 29(11): 2187-2191.
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Zhang J Q, Yang Y T, Chai C C, Li Y J, Jia H J. Ohmic Contact Property of Ti/Al/Ni/Au on AlGaN/GaN Heterostructures for Application in Ultraviolet Detectors[J]. J. Semicond., 2008, 29(11): 2187.
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Ohmic Contact Property of Ti/Al/Ni/Au on AlGaN/GaN Heterostructures for Application in Ultraviolet Detectors
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Abstract
Ohmic contacts of Ti/Al/Ni/Au multi-layer metal on Al0.27Ga0.73N/GaN heterostructures were fabricated.Specific contact resistivities were measured by the linear transmission line method (LTLM) and the circular transmission line method (CTLM),respectively.A minimum specific contact resistivity of 1.46E-5Ω·cm2 was obtained by evaporating a Ti(10nm)/Al(100nm)/Ni(40nm)/Au(100nm) multi-layer and annealing for 30s at 650℃ in ultra-high purity N2 ambient.Al0.27Ga0.73N/GaN photoconductor ultraviolet (UV) photodetectors were prepared.The dark current-voltage (I-V) characteristics of the detectors were measured and the result shows that the I-V curve was linear.Experimental results indicate that good ohmic contact on the Al0.27Ga0.73N/GaN heterostructure is obtained and it can be applied in high-performance AlGaN/GaN UV photodetector fabrications. -
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