| Citation: |
Kong Jieying, Zhang Rong, Liu Bin, Xie Zili, Zhang Yong, Xiu Xiangqian, Zheng Youdou. Optical Properties of InN Films Grown by MOCVD[J]. Journal of Semiconductors, 2007, 28(11): 1761-1764.
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Kong J Y, Zhang R, Liu B, Xie Z L, Zhang Y, Xiu X Q, Zheng Y D. Optical Properties of InN Films Grown by MOCVD[J]. Chin. J. Semicond., 2007, 28(11): 1761.
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Optical Properties of InN Films Grown by MOCVD
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Abstract
By means of optical absorption,photoluminescence (PL),and ellipsometric spectra,metal organic chemical vapor deposition (MOCVD) grown InN films are investigated.Through absorption and PL measurements,it is proven that the band gap of the high quality InN is 0.68eV,which agrees with the recently reported value of ～0.7eV.By analysis of the Raman scattering spectrum,the comparatively low background concentration of electrons results in a smaller band gap value.The transition energy E0 of wurtzite InN at critical point Г0 is determined by ellipsometric spectra.In addition,the complex refractive index n+ik of InN in the energy range from 0.65 to 4.0eV is obtained for the first time.-
Keywords:
- InN,
- optical absorption,
- PL,
- ellipsometry
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References
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Proportional views
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