A Study of ZnO/Si (111)  Interface Structure by Synchrotron Radiation X-Ray Grazing Incident Diffraction

Zhao Chaoyang; Li Ruipeng; Sun Bai; Xu Pengshou; Zhang Guobin; Pan Guoqiang

Chin. J. Semicond. > 2007, Volume 28 > Issue 11 > 1756-1760

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A Study of ZnO/Si (111) Interface Structure by Synchrotron Radiation X-Ray Grazing Incident Diffraction

Zhao Chaoyang, Li Ruipeng, Sun Bai, Xu Pengshou, Zhang Guobin and Pan Guoqiang

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Abstract: High-quality c-axis oriented ZnO thin films are grown on Si(111) substrates at different substrate temperatures by pulsed laser deposition.Synchrotron radiation X-ray grazing incident diffraction (GID) is employed to study the interface structure of ZnO /Si(111).GID results indicate that there is a compressive stress in all ZnO epitaxial films grown at substrate temperatures of 500 or 300℃ by PLD.With the increase of X-ray detection depth,the compressive stress increases.Combined with conventional XRD technology,the biaxial stress,Possion’s ratio,and c/a of the ZnO films are calculated.The two samples have a six-sided closed packing structure,deviating from the value of the standard ZnO.This indicates that the sample grown at 500℃ has better crystal quality.

Key words: zinc oxides, pulsed laser deposition, grazing incident diffraction, synchrotron radiation

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Zhao Chaoyang, Li Ruipeng, Sun Bai, Xu Pengshou, Zhang Guobin, Pan Guoqiang. A Study of ZnO/Si (111) Interface Structure by Synchrotron Radiation X-Ray Grazing Incident Diffraction[J]. Journal of Semiconductors, 2007, 28(11): 1756-1760.

Zhao C Y, Li R P, Sun B, Xu P S, Zhang G B, Pan G Q. A Study of ZnO/Si (111) Interface Structure by Synchrotron Radiation X-Ray Grazing Incident Diffraction[J]. Chin. J. Semicond., 2007, 28(11): 1756.

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Received: 18 August 2015 Revised: 09 May 2007 Online: Published: 01 November 2007

High-quality c-axis oriented ZnO thin films are grown on Si(111) substrates at different substrate temperatures by pulsed laser deposition.Synchrotron radiation X-ray grazing incident diffraction (GID) is employed to study the interface structure of ZnO /Si(111).GID results indicate that there is a compressive stress in all ZnO epitaxial films grown at substrate temperatures of 500 or 300℃ by PLD.With the increase of X-ray detection depth,the compressive stress increases.Combined with conventional XRD technology,the biaxial stress,Possion’s ratio,and c/a of the ZnO films are calculated.The two samples have a six-sided closed packing structure,deviating from the value of the standard ZnO.This indicates that the sample grown at 500℃ has better crystal quality.

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