| Citation: |
Xue Zengguan, Zhang Qifeng, Song Jiaohua, Guo Dengzhu, Liang Xuelei, Shen Zhiyong, Chen Qing, Gao Song, Zhang Gengmin, Zhao Xingyu, Liu Weimin, Peng Lianmao, Wu Jinlei, Wu Quande. Nanoelectronics[J]. Journal of Semiconductors, 2003, 24(S1): 17-21.
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Xue Z G, Zhang Q F, Song J H, Guo D Z, Liang X L, Shen Z Y, Chen Q, Gao S, Zhang G M, Zhao X Y, Liu W M, Peng L M, Wu J L, Wu Quande. Nanoelectronics[J]. Chin. J. Semicond., 2003, 24(S1): 17.
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Nanoelectronics
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Abstract
People are now endeavoring to develop nanoelectronic devices to the third generation of electron devices. Compared With their two predecessors vacuum electronic devices and microelectronic devices, the newly emerging nanoelectronic devices have such principal distinguishing characteristics as: ( 1) single-electron behaviors, ( 2) phase retaining, ( 3) quantum resistance (h /e2), ( 4) quantum bit (qubit) and ( 5) universal conductance fluctuation. The essential elements ofan electronic device are triodes with the capability of signal amplification. At present two types of nanoelectronic triode amplifiers, namely nanodot triode and carbon nanotube triode, have been proposed. The structures and properties of carbon-based nano-materials which are used for the constraction of future nanoelectronic triodes are discussed.-
Keywords:
- nanoelectronics,
- single-electron tube,
- quantum bit,
- carbon nanotube,
- bucky onion,
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References
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Proportional views
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