Citation: |
Gao Tongqiang, Zhang Chun, Chi Baoyong, Wang Zhihua. A CMOS Power Amplifier with 100% and 18% Modulation Depth for Mobile RFID Readers[J]. Journal of Semiconductors, 2008, 29(6): 1044-1047.
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Gao T Q, Zhang C, Chi B Y, Wang Z H. A CMOS Power Amplifier with 100% and 18% Modulation Depth for Mobile RFID Readers[J]. J. Semicond., 2008, 29(6): 1044.
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A CMOS Power Amplifier with 100% and 18% Modulation Depth for Mobile RFID Readers
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Abstract
Aiming at the specific protocol of RFID technology,a 915MHz CMOS transmitter front-end for OOK modulation is implemented in a 0.18μm CMOS process.The transmitter incorporates a class-E power amplifier (PA),a modulator,and a control logic unit.The direct-conversion architecture minimizes the required on-and-off-chip components and provides a low-cost and efficient solution.A novel structure is proposed to provide the modulation depth of 100% and 18%,respectively.The PA presents an output 1dB power of 17.6dBm while maintaining a maximum PAE of 35.4%.-
Keywords:
- CMOS,
- power amplifier,
- RFID,
- transmitter,
- modulation depth
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References
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Proportional views