Chin. J. Semicond. > 2001, Volume 22 > Issue 5 > 629-635
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施主型界面态引起槽栅PMOSFET性能退化的特征

任红霞 and 郝跃

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Key words: 槽栅PMOSFET, 施主界面态密度, 栅极特性, 漏极电流驱动能力, 特性退化

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    Received: 20 August 2015 Revised: Online: Published: 01 May 2001

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      Article Navigation >  Journal of Semiconductors  > 2001  >  22(5): 629-635
      任红霞, 郝跃. 施主型界面态引起槽栅PMOSFET性能退化的特征[J]. 半导体学报(英文版), 2001, 22(5): 629-635.
      Citation:
      任红霞, 郝跃. 施主型界面态引起槽栅PMOSFET性能退化的特征[J]. 半导体学报(英文版), 2001, 22(5): 629-635.
      shu

      • Received Date: 2015-08-20

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