Citation: |
Wang Bing, Xu Ping, Yang Guowei. Low-Temperature Growth and Photoluminescence of SnO2 Nanowires[J]. Journal of Semiconductors, 2008, 29(8): 1469-1474.
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Wang B, Xu P, Yang G W. Low-Temperature Growth and Photoluminescence of SnO2 Nanowires[J]. J. Semicond., 2008, 29(8): 1469.
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Low-Temperature Growth and Photoluminescence of SnO2 Nanowires
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Abstract
SnO2 nanowires with a diameter of 25nm are synthesized at 550℃ by Au-Ag catalyst assisted thermal evaporation of SnO powders.The room-temperature photoluminescence spectra (PL) of the prepared nanowires are measured.Among the four PL peaks,the peak of 418nm is newly observed.This peak is caused by the plane defects of the twinned crystal nanowires.The formation of SnO2 nanowires at low temperature is pursued on the basis of the VLS mechanism and application of the reaction source of SnO.We suggest that the chemical reactions of the low temperature and low concentration of the vaporized species are responsible for the thinner size of the SnO2 nanowires.-
Keywords:
- crystal growth,
- nanomaterials,
- morphology,
- photoluminescence
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References
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