PAPERS
Zhang Xiaomin, Wang Yanjie, Yang Ziwen, Liao Hui, Chen Weihua, Li Ding, Li Rui, Yang Zhijian, Zhang Guoyi and Hu Xiaodong
Abstract: p-type conductivity and crystal quality of Mg-doped GaN grown by MOCVD have been improved through optimization of the magnesium flow rate.The hole concentration first increased and then decreased with the magnesium flow rate while the mobility decreased monotonously.The optimum sample reached a hole concentration of 4.1E17cm-3 and a resistivity of 1Ω·cm.Based on a self-compensation model involving the deep donor MGaVN,we calculate the hole concentration as a function of magnesium doping concentration NA,which indicates that the self-compensation coefficient increases with NA;the hole concentration first increases with NA and reaches a maximum at NA≈4E19,then decreases rapidly as doping concentration increases.XRD also indicate that dislocation density decreased as magnesium flow rate decreased.
Key words: p-GaN, self-compensation, magnesium doping, MOCVD
| 1 |
Microstructural properties of over-doped GaN-based diluted magnetic semiconductors grown by MOCVD Tao Zhikuo, Zhang Rong, Xiu Xiangqian, Cui Xugao, Li Li, et al. Journal of Semiconductors, 2012, 33(7): 073002. doi: 10.1088/1674-4926/33/7/073002 |
| 2 |
High quality GaN-based LED epitaxial layers grown in a homemade MOCVD system Yin Haibo, Wang Xiaoliang, Ran Junxue, Hu Guoxin, Zhang Lu, et al. Journal of Semiconductors, 2011, 32(3): 033002. doi: 10.1088/1674-4926/32/3/033002 |
| 3 |
Finite element analysis of the temperature field in a vertical MOCVD reactor by induction heating Li Zhiming, Xu Shengrui, Zhang Jincheng, Chang Yongming, Ni Jingyu, et al. Journal of Semiconductors, 2009, 30(11): 113004. doi: 10.1088/1674-4926/30/11/113004 |
| 4 |
Studies on the Butt-Joint of a InGaAsP-Waveguide Realized with Metalorganic Vapor Phase Epitaxy Zhang Ruikang, Dong Lei, Yu Yonglin, Wang Dingli, Zhang Jing, et al. Journal of Semiconductors, 2008, 29(6): 1177-1179. |
| 5 |
Optical and Electrical Properties of GaN:Mg Grown by MOCVD Wang Lili, Zhang Shuming, Yang Hui, Liang Junwu Journal of Semiconductors, 2008, 29(1): 29-32. |
| 6 |
Growth of p-GaN on High-Temperature AlN Templates Liu Ting, Zou Zeya, Wang Zhen, Zhao Hong, Zhao Wenbo, et al. Journal of Semiconductors, 2008, 29(1): 128-132. |
| 7 |
Zhou Jing, Ren Xiaomin, Huang Yongqing, Wang Qi Journal of Semiconductors, 2008, 29(10): 1855-1859. |
| 8 |
Current-Voltage Characteristic of Alloyed Ni/Au on p-GaN Wang Yanjie, Yang Ziwen, Liao Hui, Hu Chengyu, Pan Yaobo, et al. Chinese Journal of Semiconductors , 2007, 28(S1): 372-375. |
| 9 |
Liu Yong, Nie Yuhong, Yao Shouguang Chinese Journal of Semiconductors , 2007, 28(6): 913-917. |
| 10 |
Zhao Hong, Zou Zeya, Zhao Wenbai, Liu Ting, Yang Xiaobo, et al. Chinese Journal of Semiconductors , 2007, 28(10): 1568-1573. |
| 11 |
Growth of High AI Content AIGaN Epilayer by MOCVD Wang Xiaoyan, Wang Xiaoliang, Hu Guoxin, Wang Baozhu, Li Jianping, et al. Chinese Journal of Semiconductors , 2007, 28(S1): 193-196. |
| 12 |
Simulation of the ZnO-MOCVD Horizontal Reactor Geometry Liu Songmin, Gu Shulin, Zhu Shunming, Ye Jiandong, Liu Wei, et al. Chinese Journal of Semiconductors , 2007, 28(S1): 309-311. |
| 13 |
Effect of Surface Treatment on P-GaN Ohmic Contact Property Zhao Desheng, Zhang Shuming, Zhu Jianjun, Zhao Degang, Duan Lihong, et al. Chinese Journal of Semiconductors , 2007, 28(S1): 545-547. |
| 14 |
AIGaN-Based Multi-Type Distributed Bragg Reflectors Grown by MOCVD Liu Bin, Zhang Rong, Xie Zili, Ji Xiaoli, Li Liang, et al. Chinese Journal of Semiconductors , 2007, 28(S1): 492-495. |
| 15 |
Growth and Characterization of m Plane GaN Material by MOCVD Xie Zili, Zhang Rong, Han Ping, Liu Chengxiang, Xiu XiangQian, et al. Chinese Journal of Semiconductors , 2007, 28(S1): 249-252. |
| 16 |
Wall Temperature Simulation of a Radial Flow MOCVD Reactor with Three-Separate Vertical Inlets Nie Yuhong, Liu Yong, Yao Shouguang Chinese Journal of Semiconductors , 2007, 28(1): 127-130. |
| 17 |
Numerical Simulation of Gas Phase and Surface Reaction for Growth of GaN by MOCVD Gao Lihua, Yang Yunke, Chen Haixin, Fu Song Chinese Journal of Semiconductors , 2007, 28(S1): 245-248. |
| 18 |
MOCVD-Grown AlGaN/AlN/GaN HEMT Structure with High Mobility GaN Thin Layer as Channel on SiC Wang Xiaoliang, Hu Guoxin, Ma Zhiyong, Xiao Hongling, Wang Cuimei, et al. Chinese Journal of Semiconductors , 2006, 27(9): 1521-1525. |
| 19 |
Chen Xinliang, Xu Buheng, Xue Junming, Zhao Ying, Zhang Xiaodan, et al. Chinese Journal of Semiconductors , 2005, 26(12): 2363-2368. |
| 20 |
High Resistivity GaN Film Grown by MOCVD Fang Cebao, Wang Xiaoliang, Liu Chao, Hu Guoxin, Wang Junxi, et al. Chinese Journal of Semiconductors , 2005, 26(S1): 91-93. |
Article views: 3595 Times PDF downloads: 1203 Times Cited by: 0 Times
Received: 18 August 2015 Revised: 24 December 2007 Online: Published: 01 August 2008
| Citation: |
Zhang Xiaomin, Wang Yanjie, Yang Ziwen, Liao Hui, Chen Weihua, Li Ding, Li Rui, Yang Zhijian, Zhang Guoyi, Hu Xiaodong. Optimization and Analysis of Magnesium Doping in MOCVD Grown p-GaN[J]. Journal of Semiconductors, 2008, 29(8): 1475-1478.
****
Zhang X M, Wang Y J, Yang Z W, Liao H, Chen W H, Li D, Li R, Yang Z J, Zhang G Y, Hu X D. Optimization and Analysis of Magnesium Doping in MOCVD Grown p-GaN[J]. J. Semicond., 2008, 29(8): 1475.
|
WeChat ID
Journal of Semiconductors © 2017 All Rights Reserved 京ICP备05085259号-2
DownLoad: