| Citation: |
Meng Xiangti, Wang Jilin, Huang Qiang, Jia Hongyong, Chen Peiyi, Qian Peixin. Irradiation Effects on DC Current Gain of SiGe HBT[J]. Journal of Semiconductors, 2007, 28(S1): 430-434.
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Meng X T, Wang J L, Huang Q, Jia H Y, Chen P Y, Qian P X. Irradiation Effects on DC Current Gain of SiGe HBT[J]. Chin. J. Semicond., 2007, 28(S1): 430.
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Irradiation Effects on DC Current Gain of SiGe HBT
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Abstract
The change of DC gains(p of SiGe HBT irradiated at different electrons and 7-ray doses is studied in a comparison with those of Si BIT.Generally，the radiation-damage factor of d(β) for SiGe HBT is negative in Vbe≤0.5V at high- er dose，and it is smaller in Vbe≥0.5V than that for Si BIT.SiGe HBT has much better anti-radiation performance.Some e- lectron traps is measured.The mechanism of radiation-induced change is discussed.-
Keywords:
- SiGe HBT,
- electron irradiation,
- γ-ray irradiation Si BIT,
- DC gain,
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References
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Proportional views
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