| Citation: |
Xue Chunlai, Shi Wenhua, Cheng Buwen, Yao Fei, Wang Qiming. Analysis and Optimization of Power Si1-x Gex/Si Heteroj unction Bipolar Transistor for Wireless Local Area Network Applications[J]. Journal of Semiconductors, 2007, 28(S1): 435-438.
****
Xue C L, Shi W H, Cheng B W, Yao F, Wang Q M. Analysis and Optimization of Power Si1-x Gex/Si Heteroj unction Bipolar Transistor for Wireless Local Area Network Applications[J]. Chin. J. Semicond., 2007, 28(S1): 435.
|
Analysis and Optimization of Power Si1-x Gex/Si Heteroj unction Bipolar Transistor for Wireless Local Area Network Applications
-
Abstract
The significance of the epitaxial layer structure in designing multi-finger structure power SiGe HBT for 5GHz power amplification was discussed in detail.In particular，the emitter doping concentration and thickness，the germanium con- centration，and collector doping levels were investigated.The results and analyses show that the device can achieve significant power performance at 5GHz，perfect frequency character when the heterostructure and the device layout were well designed. In the mean time，some guidelines or“design rules”were summarized by the results of this study. -
References
-
Proportional views
DownLoad: