Chin. J. Semicond. > 2005, Volume 26 > Issue 10 > 1929-1933
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GaAs-AlxGa1-xAs双势垒结构中电子共振隧穿寿命

宫箭 , 梁希侠 and 班士良

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Key words: 双势垒, 共振隧穿, 寿命

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    Received: 19 August 2015 Revised: Online: Published: 01 October 2005

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      Article Navigation >  Journal of Semiconductors  > 2005  >  26(10): 1929-1933
      宫箭, 梁希侠, 班士良. GaAs-AlxGa1-xAs双势垒结构中电子共振隧穿寿命[J]. 半导体学报(英文版), 2005, 26(10): 1929-1933.
      Citation:
      宫箭, 梁希侠, 班士良. GaAs-AlxGa1-xAs双势垒结构中电子共振隧穿寿命[J]. 半导体学报(英文版), 2005, 26(10): 1929-1933.
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      • Received Date: 2015-08-19

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