Chin. J. Semicond. > 2005, Volume 26 > Issue 10 > 1934-1938
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(GaN)n/(AlN)n应变层超晶格的电子结构

王新华 , 王玲玲 , 王怀玉 , 邓辉球 and 黄维清

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Key words: Recursion方法, (GaN)n/(AlN)n, 应变层超晶格, 电子结构, 缺陷能级

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    Received: 19 August 2015 Revised: Online: Published: 01 October 2005

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      Article Navigation >  Journal of Semiconductors  > 2005  >  26(10): 1934-1938
      王新华, 王玲玲, 王怀玉, 邓辉球, 黄维清. (GaN)n/(AlN)n应变层超晶格的电子结构[J]. 半导体学报(英文版), 2005, 26(10): 1934-1938.
      Citation:
      王新华, 王玲玲, 王怀玉, 邓辉球, 黄维清. (GaN)n/(AlN)n应变层超晶格的电子结构[J]. 半导体学报(英文版), 2005, 26(10): 1934-1938.
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      • Received Date: 2015-08-19

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