Chin. J. Semicond. > 1997, Volume 18 > Issue 2 > 151-155
|

CONTENTS

退火处理对透明导电CdIn_2O_4薄膜光学、电学性质及其能带结构的影响

吴彬 , 王万录 , 廖克俊 and 张振刚

+ Author Affiliations

PDF

    • Search

    Advanced Search >>

    GET CITATION

    shu

    Export: BibTex EndNote

    Article Metrics

    Article views: 2236 Times PDF downloads: 1157 Times Cited by: 0 Times

    History

    Received: 19 August 2015 Revised: Online: Published: 01 February 1997

    Catalog

      Email This Article

      User name:
      Email:*请输入正确邮箱
      Code:*验证码错误
      Send
      Article Navigation >  Journal of Semiconductors  > 1997  >  18(2): 151-155
      吴彬, 王万录, 廖克俊, 张振刚. 退火处理对透明导电CdIn_2O_4薄膜光学、电学性质及其能带结构的影响[J]. 半导体学报(英文版), 1997, 18(2): 151-155.
      Citation:
      吴彬, 王万录, 廖克俊, 张振刚. 退火处理对透明导电CdIn_2O_4薄膜光学、电学性质及其能带结构的影响[J]. 半导体学报(英文版), 1997, 18(2): 151-155.
      shu

      • Received Date: 2015-08-19

      Catalog

        Journal of Semiconductors © 2017 All Rights Reserved   京ICP备05085259号-2

        /

        DownLoad:  Full-Size Img  PowerPoint
        Return
        Return