Abstract: In order to get Co(W，P)film with better anti-oxidation performance，a silicidation process design of cobalt layer using Sill or Si2 H6 is proposed.Throughout the silicidation process there is competition between Si diffusion in the Co and Cu out.diffusion through the Co.It is necessary to quantify the diffusion rates in order to realize a better silicidation effect.The diffusivities of Cu and Si in Co are examined via X.ray photoelectron spectroscopy depth profile to get some useful data for obtaining the best process sequence.On the basis of analysis of the diffusion process, the optimized region can be plotted and the anti-oxidation performance of CoSi film as verifled by experiments of chemical vapor deposition of the silicidation reaction in the optimized region is improved significantly over the non-optimized process.

Key words: CoSi barrier film, hydrogen annealing, silicidation, diffusion,  process optimization